| PART |
Description |
Maker |
| KTD1302 |
Epitaxial Planar NPN Transistor
Collector Power Dissipation: PC=500mW
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| XP1507 |
RES CERAMIC 8MHZ .5% SMD 50 mA, 150 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN epitaxial planer transistor
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| BZS55B5V1 BZS55B8V2 BZS55B3V3 BZS55B4V3 BZS55B4V7 |
500mW,2% Tolerance SMD Zener Diode
|
Taiwan Semiconductor Company, Ltd
|
| MMSZ5226B MMSZ5224B MMSZ5221B09 MMSZ5230B MMSZ5248 |
500mW, 5% Tolerance SMD Zener Diode
|
Taiwan Semiconductor Co...
Taiwan Semiconductor Compan...
Taiwan Semiconductor Company, Ltd
|
| TS4148RXG TS4148RXG-14 |
500mW High Speed SMD Switching Diode
|
Taiwan Semiconductor Co...
|
| 2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB
NPN BIPOLAR TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| CMLT5078E CMLT5087E CMLT5088E |
SMD Small Signal Transistor Dual PNP Low Noise Amplifier
SMD Small Signal Transistor Dual NPN & PNP Low Noise Amplifier
SMD Small Signal Transistor Dual NPN Low Noise Amplifier
ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS
|
Central Semiconductor Corp
|
